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光磊MOS管，GL4N65

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产地	广东省/深圳市
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“光磊MOS管，GL4N65”参数说明

是否有现货：	是	封装：	TO-251/252/220
功能结构：	数/模混合集成电路	制作工艺：	半导体集成电路
导电类型：	双极型	外形：	扁平型
集成度高低：	大规模集成电路	应用领域：	标准通用
型号：	CL4N65	规格：	TO252
商标：	光磊	包装：	2000

“光磊MOS管，GL4N65”详细介绍

Absolute（ Tc= 25Tc= 25Tc= 25Tc= 25Tc= 25Tc= 25℃ unless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specifiedunless otherwise specified）：
SymbolSymbolSymbolSymbolSymbolSymbol
ParameterParameterParameterParameterParameterParameterParameterParameterParameter
RatingRatingRatingRatingRatingRating
UnitsUnitsUnitsUnitsUnits
VDSSDSSDSS
DrainDrainDrainDrainDrain-to -Source VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource Voltage
60
V
ID
Continuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain Current
20
A
Continuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain CurrentContinuous Drain Current TC = 100 °C
14
A
IDM
Pulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain CurrentPulsed Drain Current
60
A
VGS
GateGateGateGate-to -Source VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource VoltageSource Voltage
±20
V
EAS a2
Single Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche EnergySingle Pulse Avalanche Energy
72
mJ
EAR a1
Avalanche Energy ,Repetitive
18
mJ
IAR a1
Avalanche Current
11
A
dv/dt a3
Peak Diode Recovery dv/dt
5.05.05.0
V/ns
PD
Power DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower DissipationPower Dissipation
45
W
TJ，Tstg
Operating Junction and Storage Temperature Range
175，–55 to 175
℃
TL
MaximumTemperature for Soldering
300
℃